bav300, bav301, bav302, bav303 document number 85545 rev. 2.0, 20-aug-10 vishay semiconductors www.vishay.com 1 9612315 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diodes, high voltage features ? silicon epitaxial planar diodes ? saving space ? hermetic sealed parts ? fits onto sod-323 / sot-23 footprints ? electrical data identical with the devices bav100...bav103 / bav200...bav203 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? general purposes mechanical data case: micromelf weight: approx. 12 mg cathode band color: black packaging codes/options: tr3 / 10 k per 13" reel (8 mm tape), 10 k/box tr / 2.5 k per 7" reel (8 mm tape), 12.5 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation ordering code remarks bav300 v rrm = 60 v bav300-tr3 or bav300-tr tape and reel bav301 v rrm = 120 v bav301-tr3 or bav301-tr tape and reel bav302 v rrm = 200 v bav302-tr3 or bav302-tr tape and reel bav303 v rrm = 250 v bav303-tr3 or bav303-tr tape and reel parameter test condition part symbol value unit peak reverse voltage bav300 v rrm 60 v bav301 v rrm 120 v bav302 v rrm 200 v bav303 v rrm 250 v reverse voltage bav300 v r 50 v bav301 v r 100 v bav302 v r 150 v bav303 v r 200 v forward continuous current i f 250 ma peak forward surge current t p = 1 s, t j = 25 c i fsm 1a forward peak current f = 50 hz i fm 625 ma
www.vishay.com 2 document number 85545 rev. 2.0, 20-aug-10 bav300, bav301, bav302, bav303 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit junction to ambient air mounted on epoxy-glass hard tissue, fig. 4 35 m copper clad, 0.9 mm 2 copper area per electrode r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter test condition part symbol min. ty p. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 50 v bav300 i r 100 na v r = 100 v bav301 i r 100 na v r = 150 v bav302 i r 100 na v r = 200 v bav303 i r 100 na t j = 100 c, v r = 50 v bav300 i r 15 a t j = 100 c, v r = 100 v bav301 i r 15 a t j = 100 c, v r = 150v bav302 i r 15 a t j = 100 c, v r = 200v bav303 i r 15 a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms bav300 v (br) 60 v i r = 100 a, t p /t = 0.01, t p = 0.3 ms bav301 v (br) 120 v bav302 v (br) 200 v bav303 v (br) 250 v diode capacitance v r = 0, f = 1 mhz c d 1.5 pf differential forward resistance i f = 10 ma r f 5 reverse recovery time i f = i r = 30 ma, i r = 3 ma, r l = 100 t rr 50 ns
bav300, bav301, bav302, bav303 document number 85545 rev. 2.0, 20-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. reverse current vs . junction temperature figure 2. forward current vs. forward voltage figure 3. differential forward resistance vs. forward current 040 8 0 120 160 0.01 0.1 1 10 1000 i-re v erse c u rrent ( a) r t j -j u nction temperat u re (c) 200 94 90 8 4 100 scattering limit v r = v rrm 00.40. 8 1.2 1.6 0.1 1 10 100 1000 i-for w ard c u rrent (ma) f v f -for w ard v oltage ( v ) 2.0 94 90 8 5 scattering limit t j = 25 c 0.1 1 10 1 10 100 1000 r - differential for w ard resistance ( ) f i f - for w ard c u rrent (ma) 100 94 90 8 9 t j = 25 c figure 4. board for r thja definition (in mm) 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329
www.vishay.com 4 document number 85545 rev. 2.0, 20-aug-10 bav300, bav301, bav302, bav303 vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): micromelf cathode indification s u rface plan 1 (0.039) glass glass s u rface plan 2 (0.079) 1. 8 (0.071) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) > r2.5 (0.09 8 ) < 1.35 ( 0.053) 0.6 (0.024 ) foot print recommendation: reflo w soldering w a v e soldering 2.4 (0.094) 2. 8 (0.110) 0. 8 (0.031) 0. 8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.2 (0.047) 0. 8 (0.031) 1.4 (0.055) 1 (0.039) doc u ment no.:6.560-5007.01-4 re v . 13 - date: 07.j u ne.2006 96 12072 created - date: 26.j u ly.1996 * * the gap b et w een pl u g and glass can b e either on cathode or anode side
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